FREQUENCY-LOCKED 1.3-MU-M AND 1.5-MU-M SEMICONDUCTOR-LASERS FOR LIGHTWAVE SYSTEMS APPLICATIONS

被引：47
作者：
CHUNG, YC
机构：
[1] AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1990年 / 8卷 / 06期
关键词：
D O I：
10.1109/50.54503
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe a simple technique for frequency-locking 1.3-and 1.5-µm lasers to an excited-state atomic transition of noble gases using the optogalvanic effect. Many of the atomic transitions useful for these spectral regions are tabulated. Also, the performance of frequency-locked lasers under direct frequency modulation is analyzed. It is shown that neither the frequency stability nor the receiver sensitivity shows any serious degradation when a frequency-locked laser is used in a frequency shift keying (FSK) transmission experiment. © 1990 IEEE
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页码：869 / 876
页数：8
相关论文
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