PHOTOCREATED DEFECTS IN SI-BASED AMORPHOUS-SEMICONDUCTORS

被引：15

作者：

SHIMIZU, T ^{[1
]}

KUMEDA, M ^{[1
]}

MORIMOTO, A ^{[1
]}

YOKOMICHI, H ^{[1
]}

ISHII, N ^{[1
]}

机构：

[1] FUKUI INST TECHNOL,DEPT ELECT ENGN,FUKUI 910,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90678-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SEMICONDUCTING SILICON COMPOUNDS

引用

页码：377 / 380

页数：4

共 8 条

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[4]

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AMER, NM ;

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[7] KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].

STUTZMANN, M ;

JACKSON, WB ;

TSAI, CC .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1075-1077

[8]

TSAI CC, 1984, OPTICAL EFFECTS AMOR, P242

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