DOPING MECHANISM IN ALPHA-SI-H

被引：28
作者：
ROBERTSON, J
机构：
来源：
PHYSICAL REVIEW B | 1985年 / 31卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.31.3817
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3817 / 3821
页数：5
相关论文
共 38 条
[1]   AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J].
ABELES, B ;
TIEDJE, T .
PHYSICAL REVIEW LETTERS, 1983, 51 (21) :2003-2006
[2]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[3]  
ADLER D, 1981, J PHYS SC4, V42, P1
[4]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[5]  
BEYER W, 1977, APPL PHYS LETT, V42, P249
[6]  
BISHOP SG, 1978, PHYS REV B, V18, P511
[7]   NATURE OF NONSUBSTITUTIONAL DOPANT STATES AND THE CARRIER-DENSITY STATISTICS IN HYDROGENATED AMORPHOUS-SILICON [J].
CHEN, I ;
JANSEN, F .
PHYSICAL REVIEW B, 1984, 29 (06) :3759-3761
[8]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[9]   A DLTS STUDY OF THE EFFECTS OF BORON COUNTERDOPING ON THE GAP STATES IN NORMAL-TYPE HYDROGENATED AMORPHOUS-SILICON [J].
CULLEN, P ;
HARBISON, JP ;
LANG, DV ;
ADLER, D .
SOLID STATE COMMUNICATIONS, 1984, 50 (11) :991-994
[10]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274
1234