MONTE-CARLO SIMULATION OF THE TEMPORAL RESPONSE-TIMES OF NEGATIVE ELECTRON-AFFINITY GAAS TRANSMISSION PHOTOCATHODES

被引：5

作者：

YANG, B ^{[1
]}

HOU, X ^{[1
]}

XU, YL ^{[1
]}

机构：

[1] XIDIN UNIV,XIAN,PEOPLES R CHINA

来源：

PHYSICS LETTERS A | 1989年 / 142卷 / 2-3期

关键词：

D O I：

10.1016/0375-9601(89)90178-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：155 / 158

页数：4

共 13 条

[1]

ALLEN GA, 1973, ACTA ELECTRON, V16, P230

[2] IMPROVED GAAS TRANSMISSION PHOTOCATHODE [J].

ALLENSON, MB ;

ROWLAND, MC ;

STEWARD, GJ ;

SYMS, CHA ;

KING, PGR .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) :L89-&

[3]

BELL RL, 1973, NEGATIVE ELECTRON AF

[4] PHOTOEMISSION FROM ACTIVATED GALLIUM-ARSENIDE .1. VERY-HIGH-RESOLUTION ENERGY-DISTRIBUTION CURVES [J].

DROUHIN, HJ ;

HERMANN, C ;

LAMPEL, G .

PHYSICAL REVIEW B, 1985, 31 (06) :3859-3871

[5] CALCULATED ENERGY-DISTRIBUTIONS OF ELECTRONS EMITTED FROM NEGATIVE ELECTRON AFFINITY GAAS-CS-O SURFACES [J].

ESCHER, JS ;

SCHADE, H .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5309-5313

[6] CALCULATION OF MINORITY-CARRIER CONFINEMENT PROPERTIES OF III-V SEMICONDUCTOR HETEROJUNCTIONS (APPLIED TO TRANSMISSION-MODE PHOTOCATHODES) [J].

JAMES, LW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1326-1335

[7]

KOROTKIH VL, 1978, JETP LETT, V27, P617

[8]

MUSATOV AL, 1981, FIZ TVERD TELA+, V23, P540

[9] QUANTITATIVE XPS SURFACE CHEMICAL-ANALYSIS AND DIRECT MEASUREMENT OF THE TEMPORAL RESPONSE-TIMES OF GLASS-BONDED NEA GAAS TRANSMISSION PHOTOCATHODES [J].

PHILLIPS, CC ;

HUGHES, AE ;

SIBBETT, W .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (08) :1713-1725

[10]

Smith R.A., 1978, SEMICONDUCTORS

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