ON TEMPERATURE DEPENDENCE OF IRON ACCEPTOR LEVEL IN GAAS1 (RESISTIVITY HALL MOBILITY T/E)

被引:39
作者
HAISTY, RW
机构
关键词
D O I
10.1063/1.1754381
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:208 / &
相关论文
共 4 条
[1]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P118
[2]  
HAISTY RW, 1964, PHYSICS SEMICONDUCTO, P1161
[3]  
HOYT PL, 1965, MAY EL SOC M SAN FRA
[4]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].
STURGE, MD .
PHYSICAL REVIEW, 1962, 127 (03) :768-+