ULTRAFAST DYNAMICS OF NONTHERMAL CARRIERS IN GAAS

被引:4
作者
KANE, MG [1 ]
SUN, KW [1 ]
LYON, SA [1 ]
机构
[1] SIEMENS CORP RES,PRINCETON,NJ 08540
关键词
D O I
10.1088/0268-1242/9/5S/079
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied carrier-carrier scattering in hot electron-hole plasmas, using both experiments and molecular dynamics calculations. Experiments were performed using photoluminescence via neutral acceptor recombination in GaAs. Moderate plasma densities were generated using femtosecond laser pulses at 1.7 eV. Experiments and calculations indicate that for hot non-equilibrium distributions carrier-carrier scattering can dominate the electron scattering at carrier densities as low as 8 x 10(15) cm-3. We discuss the nature of the carrier-carrier scattering and the validity of classical molecular dynamics calculations.
引用
收藏
页码:697 / 699
页数:3
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