BISMUTH-DOPED TIN OXIDE THIN-FILM GAS SENSORS

被引：36

作者：

SBERVEGLIERI, G ^{[1
]}

GROPPELLI, S ^{[1
]}

NELLI, P ^{[1
]}

CAMANZI, A ^{[1
]}

机构：

[1] ENIRICERCHE SPA,I-00015 MONTEROTONDO,ITALY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 3卷 / 03期

关键词：

D O I：

10.1016/0925-4005(91)80004-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper a new method of preparing an H-2 sensor, based on an SnO2(Bi2O3) thin film, is presented. The deposition process of a tin and bismuth metallic film and its rapid thermal oxidation are described. SnO2 thin films, doped with 5 at.% Bi, show a maximum sensitivity (defined as S = DELTA-G/G%) equal to 15 000% for an air flow plus 1000 ppm H-2 at an operating temperature of 400-degree-C. An explanation of the mechanisms related to the formation of surface porosity, responsible for the high sensitivity of thin films to H-2, is given.

引用

页码：183 / 189

页数：7

共 7 条

[1]

CLIFFORD PK, 1981, THESIS CARNEGIE MELL

[2]

HEILAND G, 1982, SENSOR ACTUATOR, V2, P343, DOI 10.1016/0250-6874(81)80055-8

[3]

Heiland G., 1988, CHEM SENS TECHNOL, V1, P15

[4] TIN DIOXIDE GAS SENSORS .1. ASPECTS OF THE SURFACE-CHEMISTRY REVEALED BY ELECTRICAL CONDUCTANCE VARIATIONS [J].