PHYSICS AND APPLICATIONS OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES

被引：608
作者：
PEOPLE, R
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期
关键词：
D O I：
10.1109/JQE.1986.1073152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1696 / 1710
页数：15
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