MOLECULAR-DYNAMICS MODELING OF VAPOR-PHASE AND VERY-LOW-ENERGY ION-BEAM CRYSTAL-GROWTH PROCESSES

被引：37
作者：
DODSON, BW
机构：
[1] Semiconductor Physics Division, Sandia National Laboratories, Albuquerque, New Mexico
来源：
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1990年 / 16卷 / 02期
关键词：
D O I：
10.1080/10408439008243747
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：115 / 130
页数：16
相关论文
共 66 条
[41]   MOLECULAR-DYNAMICS SIMULATION OF EPITAXIAL-GROWTH OF THE SI(001) SURFACE [J].
LAMPINEN, J ;
NIEMINEN, RM ;
KASKI, K .
SURFACE SCIENCE, 1988, 203 (1-2) :201-211
[42]  
LORRISON BJ, 1988, J VAC SCI TECHNOL A, V6, P708
[43]  
Lundqvist S., 1983, THEORY INHOMOGENEOUS
[44]   THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS [J].
MADHUKAR, A ;
GHAISAS, SV .
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (01) :1-130
[45]   MOLECULAR-DYNAMICS SIMULATION OF THE DAMAGE FORMED IN SILICON AT ENERGIES NEAR THRESHOLD [J].
MAZZONE, AM .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 33 (1-4) :776-779
[46]   NEW TECHNIQUE FOR MOLECULAR-DYNAMICS COMPUTER-SIMULATIONS - HELLMANN-FEYNMAN THEOREM AND SUBSPACE HAMILTONIAN APPROACH [J].
MENON, M ;
ALLEN, RE .
PHYSICAL REVIEW B, 1986, 33 (10) :7099-7101
[47]   ROLE OF INCIDENT KINETIC-ENERGY OF ADATOMS IN THIN-FILM GROWTH [J].
MULLER, KH .
SURFACE SCIENCE, 1987, 184 (1-2) :L375-L382
[48]   ION-BEAM-INDUCED EPITAXIAL VAPOR-PHASE GROWTH - A MOLECULAR-DYNAMICS STUDY [J].
MULLER, KH .
PHYSICAL REVIEW B, 1987, 35 (15) :7906-7913
[49]  
MULLER KH, 1987, J APPL PHYS, V61, P2516, DOI 10.1063/1.337926
[50]  
MULLERKRUMBHAAR H, 1979, MONTE CARLO METHODS
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