DLTS OF GROWN-IN DISLOCATIONS IN P-TYPE AND N-TYPE HIGH-PURITY GERMANIUM

被引：12
作者：
SIMOEN, E
CLAUWS, P
VENNIK, J
机构：
[1] Rijksuniversiteit Gent, Lab voor, Kristallografie en Studie van de, Vaste Stof, Ghent, Belg, Rijksuniversiteit Gent, Lab voor Kristallografie en Studie van de Vaste Stof, Ghent, Belg
来源：
SOLID STATE COMMUNICATIONS | 1985年 / 54卷 / 12期
关键词：
D O I：
10.1016/0038-1098(85)90752-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Deep level transient spectroscopy (DLTS) results of p- and n-type high-purity germanium, containing a large density of grown-in dislocations are presented. The measurements reveal the presence of at least three energy bands in the bandgap of the material, which are related with dislocations. Two continua are of acceptor type and situated around E//v plus 0. 025 ev and E//v plus 0. 1 ev, respectively. The third one occurs in n-type Ge and has an average activation energy of E//c minus 0. 09 ev. The diode capacitance of the samples shows a characteristic drop with increasing temperature. A model for this phenonomenon is presented which takes account of the decrease of the effective diode area due to the dislocations.
引用
收藏
页码：1025 / 1029
页数：5
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