POLARITY DETERMINATION IN COMPOUND SEMICONDUCTORS BY CHANNELING - APPLICATION TO HETEROEPITAXY

被引：29
作者：
CHAMI, AC
LIGEON, E
DANIELOU, R
FONTENILLE, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 18期
关键词：
D O I：
10.1063/1.99112
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1502 / 1504
页数：3
相关论文
共 15 条
[1]   THE LOCATION OF SUBSTITUTIONAL FOREIGN ATOMS IN GAAS BY ASYMMETRY OF BACKSCATTERING YIELD NEAR (110) [J].
ANDERSEN, JU ;
CHECHENIN, NG ;
TIMOSHNIKOV, YA ;
ZHANG, ZH .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1984, 83 (1-2) :91-97
[2]   LOCATION OF IMPURITIES IN COMPOUNDS BY ASYMMETRY OF CHANNELING DIPS [J].
ANDERSEN, JU ;
CHECHENIN, NG ;
HUA, ZZ .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :758-760
[3]   POTENTIAL AND STOPPING-POWER INFORMATION FROM PLANAR-CHANNELING OSCILLATIONS [J].
BARRETT, JH .
PHYSICAL REVIEW B, 1979, 20 (09) :3535-3542
[4]   PREFERENTIAL INTERACTION OF CHANNELED PARTICLES IN DIATOMIC CRYSTALS [J].
BONTEMPS, A ;
FONTENILLE, J ;
GUIVARCH, A .
PHYSICS LETTERS A, 1976, 55 (06) :373-375
[5]   MODEL FOR HETEROEPITAXIAL GROWTH OF CDTE ON (100) ORIENTED GAAS SUBSTRATE [J].
COHENSOLAL, G ;
BAILLY, F ;
BARBE, M .
APPLIED PHYSICS LETTERS, 1986, 49 (22) :1519-1521
[6]   DEVELOPMENTS AND TRENDS IN MBE OF II-VI HG-BASED COMPOUNDS [J].
FAURIE, JP .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :483-488
[7]   CRYSTALLOGRAPHIC POLARITY AND ETCHING OF CADMIUM TELLURIDE [J].
FEWSTER, PF ;
WHIFFIN, PAC .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4668-4670
[8]  
HEWAT EA, 1988, J APPL PHYS, V63
[9]  
LU TC, 1987, J APPL PHYS, V61, P924
[10]  
MORGAN DV, 1973, CHANNELING, P56
12