PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP

被引：43
|
作者：
OKUYAMA, M
TOYODA, Y
HAMAKAWA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期
关键词：
D O I：
10.1143/JJAP.23.L97
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L97 / L99
页数：3
相关论文
共 50 条
  • [21] DIGITAL CHEMICAL VAPOR-DEPOSITION OF SIO2 USING A REPETITIVE REACTION OF TRIETHYLSILANE HYDROGEN AND OXIDATION
    SAKAUE, H
    NAKANO, M
    ICHIHARA, T
    HORIIKE, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (1B): : L124 - L127
  • [22] ELABORATION BY CHEMICAL VAPOR-DEPOSITION AT ROOM-TEMPERATURE OF SIO2 LAYERS
    AUDISIO, S
    LEMITI, M
    BUREAU, JC
    BALLAND, B
    BULLETIN DE LA SOCIETE CHIMIQUE DE FRANCE, 1987, (06): : 951 - 958
  • [23] NIO DEPOSITION ON SUPPORT DURING PREPARATION OF NI/SIO2 CATALYST BY CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, T
    OHTA, H
    YANO, M
    HARANO, Y
    KAGAKU KOGAKU RONBUNSHU, 1990, 16 (03) : 571 - 578
  • [24] Direct synthesis of graphene on SiO2 substrates by chemical vapor deposition
    Xu, S. C.
    Man, B. Y.
    Jiang, S. Z.
    Chen, C. S.
    Yang, C.
    Liu, M.
    Gao, X. G.
    Sun, Z. C.
    Zhang, C.
    CRYSTENGCOMM, 2013, 15 (10): : 1840 - 1844
  • [25] LASER CHEMICAL VAPOR-DEPOSITION DIRECT PATTERNING OF INSULATING FILM
    HIURA, Y
    MORISHIGE, Y
    KISHIDA, S
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1744 - 1747
  • [26] Reactions in SiO2 chemical vapor deposition using tetraethoxysilane
    Ohshita, Y
    PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 29 - 34
  • [27] MECHANISMS FOR SELECTIVITY LOSS DURING TUNGSTEN CHEMICAL VAPOR-DEPOSITION ON SI AND SIO2
    CREIGHTON, JR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1739 - 1740
  • [28] THE CHEMICAL VAPOR-DEPOSITION OF SIO2 FROM TETRAETHOXYSILANE - THE EFFECT OF THE SURFACE HYDROXYL CONCENTRATION
    TEDDER, LL
    CROWELL, JE
    LOGAN, MA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 1002 - 1006
  • [29] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SIO2 AT 2-10 TORR
    BENNETT, BR
    LORENZO, JP
    VACCARO, K
    APPLIED PHYSICS LETTERS, 1987, 50 (04) : 197 - 199
  • [30] DEPOSITION OF SIO2 THIN-FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    TSU, DV
    LUCOVSKY, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C135 - C135
12345