HIGH EFFICIENT GAALAS LIGHT-EMITTING-DIODES OF 660 NM WITH A DOUBLE HETEROSTRUCTURE ON A GAALAS SUBSTRATE

被引：25

作者：

ISHIGURO, H

SAWA, K

NAGAO, S

YAMANAKA, H

KOIKE, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.94220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1034 / 1036

页数：3

相关论文

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