RESONANT RAMAN-SCATTERING IN FERROELECTRIC SEMICONDUCTOR SBSI

被引：1

作者：

BUHAY, H

PERRY, CH

机构：

[1] NORTHEASTERN UNIV,DEPT PHYS,BOSTON,MA 02115

[2] MAX PLANCK INST SOLID STATE RES,HIGH FIELD MAGNETIC LAB,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1976年 / 80卷 / 11期

关键词：

D O I：

10.1021/j100552a018

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1208 / 1211

页数：4

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