ANALYTICAL MODEL AND CHARACTERIZATION OF SMALL-GEOMETRY BURIED-CHANNEL DEPLETION MOSFETS

被引:6
作者
YAMAGUCHI, T
MORIMOTO, S
机构
关键词
D O I
10.1109/JSSC.1983.1052033
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:784 / 793
页数:10
相关论文
共 22 条
[1]   A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT [J].
AKERS, LA ;
BEGUWALA, MME ;
CUSTODE, FZ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) :1490-1495
[2]  
BACCARANI G, 1980, P IEE 1, V127, P62
[3]   ANALYTICAL MODELING OF DEPLETION-MODE MOSFET WITH SHORT-CHANNEL AND NARROW-CHANNEL EFFECTS [J].
BALLAY, N ;
BAYLAC, B .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (06) :225-238
[4]  
BENTCHKOWSKY DF, 1969, IEEE T ELECTRON DEVI, V16, P108
[5]   COMPARISON OF SIMPLE AND NUMERICAL 2-DIMENSIONAL MODELS FOR THRESHOLD VOLTAGE OF SHORT CHANNEL MOSTS [J].
COE, DJ ;
BROCKMAN, HE ;
NICHOLAS, KH .
SOLID-STATE ELECTRONICS, 1977, 20 (12) :993-998
[6]  
DANG LM, 1980, IEEE J SOLID-ST CIRC, V15, P598
[7]  
El-Mansy Y., 1978, 1978 International Electron Devices Meeting, P20, DOI 10.1109/IEDM.1978.189342
[8]  
FUKUMA M, 1981, IEEE T ELECTRON DEVI, V27, P763
[9]   NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].
GREENFIELD, JA ;
DUTTON, RW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :585-597
[10]   OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS [J].
HOEFFLINGER, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :971-976