首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY
被引:41
作者
:
EPLER, JE
论文数:
0
引用数:
0
h-index:
0
EPLER, JE
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
THORNTON, RL
论文数:
0
引用数:
0
h-index:
0
THORNTON, RL
PAOLI, TL
论文数:
0
引用数:
0
h-index:
0
PAOLI, TL
BASHAW, MC
论文数:
0
引用数:
0
h-index:
0
BASHAW, MC
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1986年
/ 49卷
/ 21期
关键词
:
D O I
:
10.1063/1.97298
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1447 / 1449
页数:3
相关论文
共 14 条
[1]
IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES
CAMRAS, MD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
CAMRAS, MD
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HESS, K
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LUDOWISE, MJ
DIETZE, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DIETZE, WT
LEWIS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LEWIS, CR
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(02)
: 185
-
187
[2]
HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM
CLINE, HE
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
CLINE, HE
ANTHONY, TR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
ANTHONY, TR
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
: 3895
-
3900
[3]
LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
DEPPE, DG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DEPPE, DG
HSIEH, KC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HSIEH, KC
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
BURNHAM, RD
THORNTON, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
THORNTON, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(12)
: 4515
-
4520
[4]
LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
FAN, JCC
GEIS, MW
论文数:
0
引用数:
0
h-index:
0
GEIS, MW
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(05)
: 365
-
367
[5]
GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING
FUKUZAWA, T
论文数:
0
引用数:
0
h-index:
0
FUKUZAWA, T
SEMURA, S
论文数:
0
引用数:
0
h-index:
0
SEMURA, S
SAITO, H
论文数:
0
引用数:
0
h-index:
0
SAITO, H
OHTA, T
论文数:
0
引用数:
0
h-index:
0
OHTA, T
UCHIDA, Y
论文数:
0
引用数:
0
h-index:
0
UCHIDA, Y
NAKASHIMA, H
论文数:
0
引用数:
0
h-index:
0
NAKASHIMA, H
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(01)
: 1
-
3
[6]
GUIDO LJ, UNPUB
[7]
HOLONYAK N, 1983, Patent No. 4378155
[8]
GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
BIEGELSEN, DK
论文数:
0
引用数:
0
h-index:
0
BIEGELSEN, DK
MOYER, MD
论文数:
0
引用数:
0
h-index:
0
MOYER, MD
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(11)
: 900
-
902
[9]
KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128
[10]
SILICON DIFFUSION AT POLYCRYSTALLINE-SI/GAAS INTERFACES
KAVANAGH, KL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
KAVANAGH, KL
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
MAYER, JW
MAGEE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
MAGEE, CW
SHEETS, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
SHEETS, J
TONG, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
TONG, J
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
WOODALL, JM
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(11)
: 1208
-
1210
←
1
2
→
共 14 条
[1]
IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES
CAMRAS, MD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
CAMRAS, MD
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HESS, K
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LUDOWISE, MJ
DIETZE, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DIETZE, WT
LEWIS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LEWIS, CR
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(02)
: 185
-
187
[2]
HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM
CLINE, HE
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
CLINE, HE
ANTHONY, TR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
ANTHONY, TR
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
: 3895
-
3900
[3]
LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
DEPPE, DG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DEPPE, DG
HSIEH, KC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HSIEH, KC
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
BURNHAM, RD
THORNTON, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
THORNTON, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(12)
: 4515
-
4520
[4]
LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
FAN, JCC
GEIS, MW
论文数:
0
引用数:
0
h-index:
0
GEIS, MW
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(05)
: 365
-
367
[5]
GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING
FUKUZAWA, T
论文数:
0
引用数:
0
h-index:
0
FUKUZAWA, T
SEMURA, S
论文数:
0
引用数:
0
h-index:
0
SEMURA, S
SAITO, H
论文数:
0
引用数:
0
h-index:
0
SAITO, H
OHTA, T
论文数:
0
引用数:
0
h-index:
0
OHTA, T
UCHIDA, Y
论文数:
0
引用数:
0
h-index:
0
UCHIDA, Y
NAKASHIMA, H
论文数:
0
引用数:
0
h-index:
0
NAKASHIMA, H
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(01)
: 1
-
3
[6]
GUIDO LJ, UNPUB
[7]
HOLONYAK N, 1983, Patent No. 4378155
[8]
GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
BIEGELSEN, DK
论文数:
0
引用数:
0
h-index:
0
BIEGELSEN, DK
MOYER, MD
论文数:
0
引用数:
0
h-index:
0
MOYER, MD
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(11)
: 900
-
902
[9]
KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128
[10]
SILICON DIFFUSION AT POLYCRYSTALLINE-SI/GAAS INTERFACES
KAVANAGH, KL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
KAVANAGH, KL
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
MAYER, JW
MAGEE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
MAGEE, CW
SHEETS, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
SHEETS, J
TONG, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
TONG, J
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
WOODALL, JM
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(11)
: 1208
-
1210
←
1
2
→