METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET

被引：490
作者：
DELAGEBEAUDEUF, D
LINH, NT
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 06期
关键词：
D O I：
10.1109/T-ED.1982.20813
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：955 / 960
页数：6
相关论文
共 24 条
[1]   ELECTRONIC-PROPERTIES OF THE TWO-DIMENSIONAL SYSTEM AT GAAS-ALXGA1-XASINTERFACES [J].
ABSTREITER, G .
SURFACE SCIENCE, 1980, 98 (1-3) :117-125
[2]   GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J].
ANDERSON, RL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :283-287
[3]   TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].
DELAGEBEAUDEUF, D ;
DELESCLUSE, P ;
ETIENNE, P ;
LAVIRON, M ;
CHAPLART, J ;
LINH, NT .
ELECTRONICS LETTERS, 1980, 16 (17) :667-668
[4]  
DELAGEBEAUDEUF D, 1981, IEEE T ELECTRON DEVI, V28
[5]   TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].
DELESCLUSE, P ;
LAVIRON, M ;
CHAPLART, J ;
DELAGEBEAUDEUF, D ;
LINH, NT .
ELECTRONICS LETTERS, 1981, 17 (10) :342-344
[6]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[7]   ELECTRONIC-PROPERTIES OF THE GAAS-ALGAAS INTERFACE WITH APPLICATIONS TO MULTI-INTERFACE HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
SURFACE SCIENCE, 1980, 98 (1-3) :90-100
[8]  
DINGLE R, 1979, I PHYS C SER, V45, P248
[9]   FIELD-DEPENDENCE OF MOBILITY IN AL0.2GA0.8AS-GAAS HETEROJUNCTIONS AT VERY LOW FIELDS [J].
DRUMMOND, TJ ;
KEEVER, M ;
KOPP, W ;
MORKOC, H ;
HESS, K ;
STREETMAN, BG ;
CHO, AY .
ELECTRONICS LETTERS, 1981, 17 (15) :545-547
[10]  
ESAKI L, 1969, IBM RC2418 INT REP
123