NEW SINGLE-SOURCE PRECURSOR APPROACH TO GALLIUM NITRIDE

被引：76

作者：

NEUMAYER, DA

COWLEY, AH

DECKEN, A

JONES, RA

LAKHOTIA, V

EKERDT, JG

机构：

[1] UNIV TEXAS, DEPT CHEM & BIOCHEM, AUSTIN, TX 78712 USA

[2] UNIV TEXAS, DEPT CHEM ENGN, AUSTIN, TX 78712 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1995年 / 117卷 / 21期

关键词：

D O I：

10.1021/ja00126a046

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：5893 / 5894

页数：2

共 27 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] GROWTH OF GAN THIN-FILMS FROM TRIETHYLGALLIUM MONAMINE [J].

ANDREWS, JE ;

LITTLEJOHN, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1273-1275

[3] X-RAY CRYSTAL-STRUCTURE OF THE DIMETHYLGALLIUM AZIDE POLYMER AND ITS USE AS A GALLIUM NITRIDE PRECURSOR [J].

ATWOOD, DA ;

JONES, RA ;

COWLEY, AH ;

ATWOOD, JL ;

BOTT, SG .

JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1990, 394 (1-3) :C6-C8

[4] SYNTHESES AND STRUCTURES OF [NME2(MU-NME2)GACL]2 AND [TMP(MU-OET)GACL]2 (TMP = 2,6-TETRAMETHYLPIPERIDIDE) [J].

ATWOOD, DA ;

COWLEY, AH ;

JONES, RA ;

MARDONES, MA ;

ATWOOD, JL ;

BOTT, SG .

JOURNAL OF COORDINATION CHEMISTRY, 1992, 26 (04) :285-291

[5] GROWTH-KINETICS AND CHARACTERIZATIONS OF GALLIUM NITRIDE THIN-FILMS BY REMOTE PECVD [J].

CHOI, SW ;

BACHMANN, KJ ;

LUCOVSKY, G .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (04) :847-854

[6] SURPRISING STABILITY OF A MONOMERIC BIS AZIDE OF GALLIUM(III) [J].

COWLEY, AH ;

GABBAI, FP ;

OLBRICH, F ;

CORBELIN, S ;

LAGOW, RJ .

JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1995, 487 (1-2) :C5-C7

[7] HIGH-QUALITY GAN HETEROEPITAXIAL FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

FERTITTA, KG ;

HOLMES, AL ;

NEFF, JG ;

CIUBA, FJ ;

DUPUIS, RD .

APPLIED PHYSICS LETTERS, 1994, 65 (14) :1823-1825

[8] NEW PRECURSOR FOR GROWING NITRIDE FILMS [J].

FLOWERS, MC ;

JONATHAN, NBH ;

LAURIE, AB ;

MORRIS, A ;

PARKER, GJ .

JOURNAL OF MATERIALS CHEMISTRY, 1992, 2 (03) :365-366

[9] GROWTH-CHARACTERIZATION OF LOW-TEMPERATURE MOCVD GAN - COMPARISON BETWEEN N2H4 AND NH3 [J].

FUJIEDA, S ;

MIZUTA, M ;

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (12) :2067-2071

[10] OMVPE OF GAN AND AIN FILMS BY METAL ALKYLS AND HYDRAZINE [J].

GASKILL, DK ;

BOTTKA, N ;

LIN, MC .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :418-423

← 1 2 3 →