A CLOSED-FORM INVERSION-TYPE POLYSILICON THIN-FILM-TRANSISTOR DC/AC MODEL CONSIDERING THE KINK EFFECT

被引：26

作者：

CHEN, SS ^{[1
]}

SHONE, FC ^{[1
]}

KUO, JB ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,DEPT ELECTR ENGN,TAIPEI 10617,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.358874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports a closed-form inversion-type polysilicon thin-film transistor dc/ac model considering kink effect for circuit simulation. Using a quasi-two-dimensional approach and an impact ionization model, the kink effect has been explained in terms of dc/ac models as verified by the experimental data. Based on the analytical model, a smaller grain leads to a higher avalanche multiplication factor as a result of a larger average trapped charge density. © 1995 American Institute of Physics.

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页码：1776 / 1784

页数：9

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