RADIATION-HARD DESIGN FOR SOI MOS INVERTERS

被引：13
作者：
FRANCIS, P
MICHEL, C
FLANDRE, D
COLINGE, JP
机构：
[1] Université Catholique de Louvain, Louvain-la-Neuve, MaxwellDICE, Place du Levant
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 02期
关键词：
Design - Electric inverters - Radiation protection - Thin films;
D O I：
10.1109/23.281534
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The total-dose hardness of MOS integrated circuits is usually improved by increasing the hardness of the individual transistors. In this paper, we propose circuit design techniques that can further decrease the sensitivity of cells to radiation dose. This concept is applied to simple cells (inverters) produced in both thin-film SOI and gate-all-around technologies.
引用
收藏
页码：402 / 407
页数：6
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