SURFACE-DIFFUSION OF IN ON GE(111) STUDIED BY OPTICAL 2ND-HARMONIC MICROSCOPY

Surface diffusion of In on Ge(111) has been measured by optical second harmonic microscopy. This technique employs surface second harmonic generation to directly image submonolayer surface concentration profiles. The coverage dependence of the diffusivity D can then be obtained from a Boltzmann-Matano analysis. In the coverage range 0.1<theta<0.48, the activation energy E(diff) decreased with increasing coverage, ranging from 31 kcal/mol at theta=0.1 to 23 kcal/mol at theta=0.48. Over the same coverage range, the pre-exponential factor D-0 decreased from 5X10(2) to 1X10(-1) cm(2)/s. This gradual change reflects a change in diffusion mechanism arising from the disorder nature of the Ge(111) surface. At low coverages, In adatoms sink into the top layer of Ge, and diffusion is dominated by thermal formation of adatom-vacancy pairs. At high coverages, diffusion occurs by normal site-to-site hopping. The gradual change in diffusion parameters with coverage was interrupted by an apparent phase transition at theta=0.16. At this point, both E(diff) and D-0 peaked sharply at 41 kcal/mol and 6X10(5) cm(2)/s, respectively. The desorption energy E(des) was measured by temperature programmed desorption. E(des) decreased from 60 kcal/mol at submonolayer coverages to 55 kcal/mol at multilayer coverages.