SCALE OF COMPOSITION FLUCTUATIONS IN GE1-XSIX ALLOYS

被引：0

作者：

SHAKHOVTSOVA, SI

SHAKHOVTSOV, KV

SHPINAR, LI

YASKOVETS, II

机构：

来源：

SEMICONDUCTORS | 1993年 / 27卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analysis of the carrier mobility in Ge1-xSix solid solutions can be used to estimate the scale of fluctuations in the distribution of silicon in the interior of a crystal. Typical magnitude of fluctuations depends on the silicon content. The analysis is based on two possible types of distribution of the fluctuations with respect to size.

引用

页码：563 / 565

页数：3

共 15 条

[1]

BELOKUROVA IN, 1959, IZV AKAD NAUK S TNMT, P6

[2]

Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[3]

GELMONT BL, 1975, SOV PHYS SEMICOND+, V8, P1549

[4]

KEGLOU YP, 1969, CHEM BINDING SEMICON

[5]

LIFSHITZ IM, 1959, ZH EKSP TEOR FIZ, V8, P331

[6]

RENTZSCH R, 1978, SOV PHYS SEMICOND+, V12, P416

[7]

ROMANENKO VN, 1960, SOV PHYS DOKL, V4, P1342

[8]

ROMANENKO VN, 1970, INORG MATER, V6, P1733

[9] THE MOBILITY OF CARRIERS AND THE MAGNETORESISTANCE OF GE-SI ALLOYS [J].

SHAHOVTSOVA, SI ;

SHAHOVTSOV, VI ;

BELOKUROVA, IN .

SOLID STATE COMMUNICATIONS, 1982, 41 (04) :269-272

[10]

SHAKHOVTSOV VI, 1989, SOV PHYS SEMICOND+, V23, P28

← 1 2 →