BACK-CHANNEL HOT-ELECTRON EFFECT ON THE FRONT-CHANNEL CHARACTERISTICS IN THIN-FILM SOI MOSFETS

被引：5

作者：

ZHANG, BL ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 12期

关键词：

D O I：

10.1109/55.116960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The front-channel I-V characteristics in thin-film SOI MOSFET's have been studied before and after back-channel hot-electron stress. As a result of electron trapping in the buried oxide near the drain junction, this stress causes the following notable changes: 1) a reduction of the channel current for a given gate voltage; 2) the appearance of the kink effect when measured in the reverse mode (with source and drain interchanged); and 3) an increased breakdown voltage when measured in the reverse mode. Both the kink effect and the change in the breakdown behavior can be attributed to the increased barrier height of the drain-body junction resulting from the localized electron trapping in the buried oxide.

引用

页码：699 / 701

页数：3

共 5 条

[1] DEGRADATION IN THIN-FILM SOI MOSFETS CAUSED BY SINGLE-TRANSISTOR LATCH [J].