MOCVD GROWTH OF GAAS/GA1-XALXAS EPITAXIAL LAYERS FOR MONOLITHIC OPTOELECTRONIC DEVICES

被引：0

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作者：

JONES, MW

FORBES, N

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

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D O I：

10.1016/0022-0248(84)90451-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

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页码：466 / 473

页数：8

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