MOCVD GROWTH OF GAAS/GA1-XALXAS EPITAXIAL LAYERS FOR MONOLITHIC OPTOELECTRONIC DEVICES

被引：0
|
作者：
JONES, MW
FORBES, N
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期
关键词：
D O I：
10.1016/0022-0248(84)90451-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
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页码：466 / 473
页数：8
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