INJECTION LOCKING OF DIODE-LASERS

被引:46
|
作者
HADLEY, GR
机构
[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA
关键词
RESONATORS; CAVITY - Mathematical Models;
D O I
10.1109/JQE.1986.1072979
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A theoretical analysis of the forward and reflected amplitudes in a diode laser oscillator cavity for both a single resonant mode and an injected signal is presented. The analysis includes gain saturation and allows the gain coefficient at the injected frequency to be different from that at the resonant frequency. Analytic solutions for the axially dependent amplitudes are presented for the case of equal gain coefficients. For the more general case, a formula is presented for the intensity necessary for locking, which is shown to reduce in various limits to other expressions previously published. One immediate consequence of the present formalism is that the use of antireflection coatings on the diode end facets should act to reduce the injected signal intensity necessary for locking. In fact, reduction of the reflectivities to values of a few percent should permit locking over the entire gain curve with incident intensities which are small compared to the slave oscillator's normal output.
引用
收藏
页码:419 / 426
页数:8
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