TRANSITION REGION BEHAVIOR IN ABRUPT, FORWARD-BIASED PN-JUNCTIONS

被引：19

作者：

GUCKEL, H ^{[1
]}

THOMAS, DC ^{[1
]}

IYENGAR, SV ^{[1
]}

DEMIRKOL, A ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT ELECT ENGN,MADISON,WI 53706

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 07期

关键词：

D O I：

10.1016/0038-1101(77)90106-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：647 / 652

页数：6

共 10 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].

DEMARI, A .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+

[3]

Fletcher N.H., 1957, J ELECT, V2, P609, DOI [10.1080/00207215708937064, DOI 10.1080/00207215708937064]

[4] HOLE-ELECTRON PRODUCT OF PN JUNCTIONS [J].

GUMMEL, HK .

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[5] BOUNDARY CONDITIONS AT P-N JUNCTIONS [J].

HAUSER, JR .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :133-&

[6] POTENTIAL AND ELECTRIC-FIELD AT METALLURGICAL BOUNDARY OF AN ABRUPT P-N SEMICONDUCTOR JUNCTION [J].

KENNEDY, DP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :988-994

[7]

MIDDLEBROOK RD, 1957, INTRO JUNCTION TRANS

[8] BOUNDARY CONDITIONS FOR SPACE-CHARGE REGION OF A P-N-JUNCTION [J].

NUSSBAUM, A .

SOLID-STATE ELECTRONICS, 1969, 12 (03) :177-&

[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[10] INVERSION LAYERS IN ABRUPT P-N JUNCTIONS [J].

VANDEWIELE, F ;

DEMOULIN, E .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :717-+

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