A MANUFACTURING PROCESS FOR GALLIUM-ARSENIDE MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS

被引:0
作者
DINDO, S
NORTH, R
MADGE, D
机构
关键词
D O I
10.1139/p87-138
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:885 / 891
页数:7
相关论文
共 8 条
[1]   CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].
BERGER, HH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&
[2]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[3]  
GLASER AB, 1977, INTEGRATED CIRCUIT E, P435
[4]   A DIAGNOSTIC PATTERN FOR GAAS-FET MATERIAL DEVELOPMENT AND PROCESS MONITORING [J].
IMMORLICA, AA ;
DECKER, DR ;
HILL, WA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) :2285-2291
[5]  
IMMORLICA AA, 1980, C SER I PHYS, V56, P423
[6]   SIMPLE METHOD OF MEASURING DRIFT-MOBILITY PROFILES IN THIN SEMICONDUCTOR-FILMS [J].
PUCEL, RA ;
KRUMM, CF .
ELECTRONICS LETTERS, 1976, 12 (10) :240-242
[7]  
van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1
[8]  
WILLIAMS RE, 1984, GALLIUM ARSENIDE PRO, P19