THE DONOR NATURE OF THE MAIN ELECTRON TRAPS IN ELECTRON-IRRADIATED N-TYPE GAAS

被引：13

作者：

LOOK, DC

机构：

[1] Wright State Univ, Dayton, OH, USA, Wright State Univ, Dayton, OH, USA

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 64卷 / 05期

关键词：

D O I：

10.1016/0038-1098(87)90705-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：805 / 807

页数：3

共 8 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330

[2] MOBILITY IN EPITAXIAL GAAS UNDER 1-MEV ELECTRON-IRRADIATION [J].

DRESNER, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :4118-4119

[3] TYPE CONVERSION IN ELECTRON-IRRADIATED GAAS [J].

FARMER, JW ;

LOOK, DC .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2970-2972

[4]

Lang D. V., 1977, I PHYS C SER, V31, P70

[5]

LOOK DC, IN PRESS J APPL PHYS

[6] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS [J].

LOUALICHE, S ;

NOUAILHAT, A ;

GUILLOT, G ;

LANNOO, M .

PHYSICAL REVIEW B, 1984, 30 (10) :5822-5834

[7] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[8] IRRADIATION-INDUCED DEFECTS IN PARA-TYPE GAAS [J].

STIEVENARD, D ;

BODDAERT, X ;

BOURGOIN, JC .

PHYSICAL REVIEW B, 1986, 34 (06) :4048-4058

← 1 →