HIGH-FREQUENCY DOUBLER OPERATION OF GAAS FIELD-EFFECT TRANSISTORS

被引：39

作者：

RAUSCHER, C

机构：

来源：

关键词：

D O I：

10.1109/TMTT.1983.1131526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：462 / 473

页数：12

共 16 条

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[4] SINGLE-GATE MESFET FREQUENCY DOUBLERS
GOPINATH, A
RANKIN, JB
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[5] PERFORMANCE AND DESIGN OF MICROWAVE FET HARMONIC GENERATORS
GUPTA, MS
LATON, RW
LEE, TT
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (03) : 261 - 263
[6] LARGE-SIGNAL TECHNIQUE FOR DESIGNING SINGLE-FREQUENCY AND VOLTAGE-CONTROLLED GAAS-FET OSCILLATORS
RAUSCHER, C
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (04) : 293 - 304
[7] SIMULATION OF NON-LINEAR MICROWAVE FET PERFORMANCE USING A QUASI-STATIC MODEL
RAUSCHER, C
WILLING, HA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (10) : 834 - 840
[8] Rauscher C., 1982, 1982 IEEE MTT-S International Microwave Symposium Digest, P280
[9] Rosenberg J., 1982, 1982 IEEE MTT-S International Microwave Symposium Digest, P166
[10] Schellenberg J. M., 1981, 1981 IEEE MTT-S International Microwave Symposium Digest, P328