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- [3] GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR ANALYTICAL MODEL AND EQUIVALENT-CIRCUIT ACTA ELECTRONICA, 1980, 23 (02): : 99 - 109
- [8] Determination of the parameters of the equivalent circuit of the active region of a Schottky-barrier gate field-effect transistor Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1992, 47 (09): : 71 - 77