HIGH EMITTER EFFICIENCY IN INP/GAINAS HBTS WITH ULTRA-HIGH BASE DOPING LEVELS

被引：7
作者：
BETSER, Y
RITTER, D
机构：
[1] Department of Electrical Engineering, Haifa, 32000, Technion
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 03期
关键词：
D O I：
10.1109/55.363237
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The emitter efficiency of InP/GaInAs heterojunction bipolar transistors is calculated taking into account bandgap narrowing in the base, quantum mechanical tunneling, and the exact doping profile in the base. It is found that the emitter efficiency is high and does not limit the current gain of practical devices, up to a base doping level of 1 x 10(20) cm-3, and up to 400-degrees K. It is shown that the base emitter junction saturation current can be controlled over two orders of magnitude by a proper small displacement of the doped layer in the base.
引用
收藏
页码：97 / 99
页数：3
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