PICOSECOND RAMAN STUDIES OF ELECTRIC-FIELD-INDUCED NONEQUILIBRIUM CARRIER DISTRIBUTIONS IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS

被引：19
作者：
GRANN, ED
SHEIH, SJ
CHIA, C
TSEN, KT
SANKEY, OF
GUNCER, SE
FERRY, DK
MARACAS, G
DROOPAD, R
SALVADOR, A
BOTCHAREV, A
MORKOC, H
机构：
[1] ARIZONA STATE UNIV,DEPT ELECT ENGN & COMP SCI,TEMPE,AZ 85287
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 10期
关键词：
D O I：
10.1063/1.110848
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T congruent-to 80 K. For an injected carrier density of n congruent-to 2.2 x 10(18) cm-3 and electric field intensity E = 25 kV/cm, the drift velocity of electrons as high as V(d) = 2.5 x 10(7) cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.
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页码：1230 / 1232
页数：3
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