CHEMICAL SPUTTERING OF SILICON BY F+, CL+, AND BR+ IONS - REACTIVE SPOT MODEL FOR REACTIVE ION ETCHING

被引:108
作者
TACHI, S
OKUDAIRA, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词
D O I
10.1116/1.583404
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:459 / 467
页数:9
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