CHEMICAL SPUTTERING OF SILICON BY F+, CL+, AND BR+ IONS - REACTIVE SPOT MODEL FOR REACTIVE ION ETCHING

被引：108
作者：
TACHI, S
OKUDAIRA, S
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词：
D O I：
10.1116/1.583404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：459 / 467
页数：9
相关论文
共 44 条
[1]  
ASPNES DE, 1980, SURF SCI, V96, P1023
[2]   KINETICS OF N-2+ AND N+ REACTIONS WITH MO AT LESS-THAN 100 EV IMPACT ENERGIES [J].
BALDWIN, DA ;
SHAMIR, N ;
RABALAIS, JW .
SURFACE SCIENCE, 1984, 141 (2-3) :617-638
[3]   SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J].
BARKER, RA ;
MAYER, TM ;
PEARSON, WC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :37-42
[4]  
BEHRISH R, 1981, SPUTTERING PARTICLE, V1
[5]  
BEHRISH R, 1981, SPUTTERING PARTICLE, V2
[6]  
BONDUR JA, 1978, J VAC SCI TECHNOL, V13, P1023
[7]   REACTIVE ION-BEAM ETCHING OF SIO2 AND POLYCRYSTALLINE SILICON [J].
BROWN, DM ;
HEATH, BA ;
COUTUMAS, T ;
THOMPSON, GR .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :159-161
[8]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[9]  
CHINN, 1985, J VAC SCI TECHNOL B, V3, P410
[10]   ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].
COBURN, JW ;
WINTERS, HF ;
CHUANG, TJ .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540
12345