EVALUATION OF LDD MOSFETS BASED ON HOT-ELECTRON-INDUCED DEGRADATION

被引：32

|

作者：

HSU, FC

CHIU, KY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期

关键词：

D O I：

10.1109/EDL.1984.25870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：162 / 165

页数：4

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