EVALUATION OF LDD MOSFETS BASED ON HOT-ELECTRON-INDUCED DEGRADATION

被引：32
作者：
HSU, FC
CHIU, KY
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期
关键词：
D O I：
10.1109/EDL.1984.25870
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：162 / 165
页数：4
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