EVALUATION OF LDD MOSFETS BASED ON HOT-ELECTRON-INDUCED DEGRADATION

被引:32
作者
HSU, FC
CHIU, KY
机构
关键词
D O I
10.1109/EDL.1984.25870
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:162 / 165
页数:4
相关论文
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