SILICON DEPOSITION FROM SICL4 IN A COLD RF PLASMA - THE EFFECT OF DOPING GASES ON DEPOSITION RATES, CHLORINE CONTENT AND THE MORPHOLOGY OF THE FILMS

被引：8

作者：

MANORY, R ^{[1
]}

GROSSMAN, E ^{[1
]}

AVNI, R ^{[1
]}

GRILL, A ^{[1
]}

机构：

[1] NUCL RES CTR NEGEV,IL-84190 BEERSHEBA,ISRAEL

来源：

关键词：

D O I：

10.1016/0040-6090(84)90235-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / 141

页数：7

共 13 条

[1]

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[2]

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[4]

EVERSTEYN FC, 1973, J ELECT SOC, V120, P107

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[6]

GRILL A, 1983, 6TH P INT S PLASM CH, V3, P843

[7]

GROSSMAN E, 1981, THESIS BENGURION U B

[8]

GROSSMAN E, 1982, PLASMA CHEM PLASMA P, V2, P341

HALL, LH ;

KOLIWAD, KM .

[10] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].

KNIGHTS, JC .