CONDUCTION PROPERTIES OF SILICON DIOXIDE IN OXIDE NITRIDE OXIDE STRUCTURES

被引：4

作者：

MANZINI, S

QUEIROLO, G

机构：

[1] SGS Microelecttronica SpA, Milan, Italy, SGS Microelecttronica SpA, Milan, Italy

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 06期

关键词：

OXIDES - Electric Conductivity - SILICON NITRIDE;

D O I：

10.1016/0038-1101(87)90216-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conduction properties of silicon dioxide have been investigated in polysilicon-oxidized silicon nitride (top-oxide)-silicon nitride-silicon dioxide (bottom-oxide)-silicon structures with various nitride and top-oxide thicknesses. Oxidized silicon nitride was found to exhibit electron tunneling limited (Fowler-Nordheim-type) conduction. Electron Fowler-Nordheim conduction in the relatively thick ( congruent 100 Angstrom) bottom-oxide was verified down to low electric fields ( congruent 5 Mv/cm).

引用

页码：587 / 591

页数：5

共 9 条

[1] BUCHANAN DA, 1985, INSULATING FILMS SEM, P191
[2] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS
DIMARIA, DJ
ARNETT, PC
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 227 - 244
[3] LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826
[4] CHARGE TRANSPORT AND TRAPPING IN SILICON NITRIDE SILICON DIOXIDE DIELECTRIC DOUBLE-LAYERS
MANZINI, S
VOLONTE, F
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4300 - 4306
[5] STUDY OF CARRIER TRAPPING IN STACKED DIELECTRICS
NOZAKI, S
GIRIDHAR, RV
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 486 - 489
[6] A LOW-VOLTAGE ALTERABLE EEPROM WITH METAL-OXIDE NITRIDE OXIDE SEMICONDUCTOR (MONOS) STRUCTURES
SUZUKI, E
HIRAISHI, H
ISHII, K
HAYASHI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 122 - 128
[7] TRAP-ASSISTED CHARGE INJECTION IN MNOS STRUCTURES
SVENSSON, C
LUNDSTROM, I
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4657 - 4663
[8] Watanabe T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P173
[9] ON TUNNELING IN METAL-OXIDE-SILICON STRUCTURES
WEINBERG, ZA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5052 - 5056

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