共 50 条
- [1] MULTIPHOTON ABSORPTION BY SILICON TETRAFLUORIDE OF INFRARED RADIATION VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 2 KHIMIYA, 1988, 29 (02): : 219 - 220
- [2] THE ABSORPTION OF FREE CHARGE CARRIERS BY INFRARED RADIATION IN SILICON SOVIET PHYSICS-SOLID STATE, 1960, 2 (02): : 346 - 349
- [3] ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN P-TYPE SILICON SOVIET PHYSICS-SOLID STATE, 1961, 2 (07): : 1471 - 1475
- [4] ABSORPTION OF INFRARED RADIATION BY FREE CARRIERS IN SILICON AT HIGH TEMPERATURES SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (09): : 2295 - +
- [5] INFRARED ABSORPTION OF SILICON OF HIGH RESISTIVITY CONTAINING RADIATION DEFECTS SOVIET PHYSICS-SOLID STATE, 1959, 1 (06): : 894 - 896
- [6] Influence of radiation damage on the absorption of near -infrared light in silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 968 (968):
- [7] CONCERNING THE ABSORPTION OF INFRARED RADIATION IN N-TYPE SILICON SOVIET PHYSICS-SOLID STATE, 1961, 2 (10): : 2354 - 2355
- [9] Absorption Spectral Characteristics of Infrared Radiation in Silicon Dioxide Films for Thermal Radiation Detectors Optoelectronics, Instrumentation and Data Processing, 2019, 55 : 508 - 512
- [10] INFRARED-ABSORPTION BY RADIATION DEFECTS IN ALUMINUM-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 346 - 347