ABSORPTION OF INFRARED RADIATION IN SILICON

被引：34

作者：

BOYD, IW ^{[1
]}

BINNIE, TD ^{[1
]}

WILSON, JIB ^{[1
]}

COLLES, MJ ^{[1
]}

机构：

[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3061 / 3063

页数：3

共 12 条

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[2] THEORETICAL CONSIDERATIONS REGARDING PULSED CO2-LASER ANNEALING OF SILICON
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[3] SUBSTRATE HEATING EFFECTS IN CO2-LASER ANNEALING OF ION-IMPLANTED SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2327 - 2328
[4] A STUDY OF THIN SILICON DIOXIDE FILMS USING INFRARED-ABSORPTION TECHNIQUES
BOYD, IW
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4166 - 4172
[5] OXIDATION OF SILICON SURFACES BY CO2-LASERS
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 162 - 164
[6] A REVIEW OF LASER-BEAM APPLICATIONS FOR PROCESSING SILICON
BOYD, IW
[J]. CONTEMPORARY PHYSICS, 1983, 24 (05) : 461 - 490
[7] QUANTITATIVE-DETERMINATION OF THE CARRIER CONCENTRATION DISTRIBUTION IN SEMICONDUCTORS BY SCANNING IR ABSORPTION - SI
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LAGOWSKI, J
GATOS, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 260 - 263
[8] LATTICE ABSORPTION BANDS IN SILICON
JOHNSON, FA
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470): : 265 - 272
[9] TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON
LAMPERT, MO
KOEBEL, JM
SIFFERT, P
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 4975 - 4976
[10] PAUL W, 1963, PROGRESS SEMICONDUCT, V7, P135

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