THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS

被引：31

作者：

SEBESTYEN, T

HARTNAGEL, HL

HERRON, LH

机构：

[1] UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND

[2] UNIV NEWCASTLE TYNE,DEPT ELECT & ELECTR ENGN,MERZ COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 12期

关键词：

D O I：

10.1109/T-ED.1975.18327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1073 / 1077

页数：5

共 19 条

[1]

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[3]

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[5] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

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[6]

HANSEN M, 1960, CONSTITUTION BINARY

[7] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J].

HEIME, K ;

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WORTMANN, A .

SOLID-STATE ELECTRONICS, 1974, 17 (08) :835-&

[8] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LEFUR, P .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+

[9]

MIGITAKA M, 1972, P S GAAS I PHYS C SE, P249

[10]

MILNES AG, 1972, HETEROJUNCTIONS META, P293

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