TEMPERATURE-DEPENDENCE OF SILICON WORK FUNCTION BY MEANS OF A RETARDING POTENTIAL TECHNIQUE

被引：4
|
作者：
BURTON, LC [1 ]
机构：
[1] TEXAS TECH UNIV,DEPT ELECT ENGN,LUBBOCK,TX 79409
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 03期
关键词：
D O I：
10.1063/1.322703
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1189 / 1191
页数：3
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