FULLY MACROSCOPIC DESCRIPTION OF ELECTRICAL-CONDUCTION IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

被引：11

作者：

ANCONA, MG ^{[1
]}

TIERSTEN, HF ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT MECH ENGN AERONAUT ENGN & MECH,TROY,NY 12181

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.27.7018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7018 / 7045

页数：28

共 27 条

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[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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SAH, CT .

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[9]

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[10] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J].

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