CHROMIUM AND CHROMIUM-BORON PAIRS IN SILICON

被引：93
作者：
CONZELMANN, H
GRAFF, K
WEBER, ER
机构：
[1] TELEFUNKEN ELECTR GMBH,D-7100 HEILBRONN,FED REP GER
[2] UNIV COLOGNE,INST PHYS 2,MET PHYS ABT,D-5000 COLOGNE 41,FED REP GER
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 30卷 / 03期
关键词：
D O I：
10.1007/BF00620536
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：169 / 175
页数：7
相关论文
共 26 条
[1]  
BENDIK NT, 1970, FIZ TVERD TELA+, V12, P150
[2]  
BUGAI AA, 1978, SOV PHYS JETP, V47, P1170
[3]  
CHANG T, 1978, NBS26059 PUBL
[4]  
Cheng L. J., 1980, ELECTRONIC OPTICAL P, P46
[5]  
CONZELMANN H, 1982, PHYSICA B
[6]   IMPURITIES IN SILICON SOLAR-CELLS [J].
DAVIS, JR ;
ROHATGI, A ;
HOPKINS, RH ;
BLAIS, PD ;
RAICHOUDHURY, P ;
MCCORMICK, JR ;
MOLLENKOPF, HC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :677-687
[7]   ENERGY-LEVELS AND SOLUBILITY OF INTERSTITIAL CHROMIUM IN SILICON [J].
FEICHTINGER, H ;
CZAPUTA, R .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :706-708
[8]   THE PROPERTIES OF IRON IN SILICON [J].
GRAFF, K ;
PIEPER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :669-674
[9]  
GRAFF K, 1981, SEMICONDUCTOR SILICO, P331
[10]   ISOELECTRONIC DONORS AND ACCEPTORS [J].
HOPFIELD, JJ ;
THOMAS, DG ;
LYNCH, RT .
PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&
123