RATES OF FORMATION OF THERMAL OXIDES OF SILICON

被引:39
作者
EVITTS, HC
COOPER, HW
FLASCHEN, SS
机构
关键词
D O I
10.1149/1.2426211
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:688 / 690
页数:3
相关论文
共 50 条
  • [31] On the kinetics of thermal donor formation in silicon
    Borenstein, Jeffrey T.
    Peak, David
    Corbett, James W.
    JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) : 527 - 536
  • [32] ENHANCED CURRENT INJECTION IN THERMAL OXIDES GROWN ON TEXTURIZED SILICON
    OLCER, M
    BUHLMANN, HJ
    ILEGEMS, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 621 - 627
  • [33] ENHANCED CURRENT INJECTION IN THERMAL OXIDES GROWN ON TEXTURIZED SILICON
    Olcer, M.
    Buehlmann, H.J.
    Ilegems, M.
    Journal of the Electrochemical Society, 1986, 133 (03): : 621 - 627
  • [34] Effect of thermal annealing on mechanical stress in PECVD silicon oxides
    Domínguez, C
    Rodríguez, JA
    Zine, N
    QUIMICA ANALITICA, 1999, 18 : 55 - 57
  • [35] Properties of purified direct steam grown silicon thermal oxides
    Mack, Sebastian
    Wolf, Andreas
    Walczak, Alexandra
    Thaidigsmann, Benjamin
    Wotke, Edgar Allan
    Spiegelman, Jeffrey J.
    Preu, Ralf
    Biro, Daniel
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (09) : 2570 - 2575
  • [36] RADIATION HARDENING OF THERMAL OXIDES ON SILICON VIA ION IMPLANTATION
    DONOVAN, RP
    SIMONS, M
    MONTEITH, LK
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 203 - +
  • [37] Formation of bottom oxides in porous silicon films by anodic oxidation
    Lee, CH
    Yeh, CC
    Lee, CH
    Hsu, KYJ
    APPLIED SURFACE SCIENCE, 1996, 92 : 621 - 625
  • [38] Shear band formation in columnar thermal barrier oxides
    Watanabe, M
    Xu, T
    Levi, CG
    Gandhi, AS
    Evans, AG
    ACTA MATERIALIA, 2005, 53 (13) : 3765 - 3773
  • [39] FORMATION OF A MINERAL AT CONTACT OF SILICON CARBIDE WITH IRON AND CALIUM OXIDES
    KAINARCKII, IS
    KARIAKIN, LI
    DOKLADY AKADEMII NAUK SSSR, 1962, 142 (04): : 887 - &
  • [40] Formation of stacked gate oxides by rapid thermal processing
    Misra, V
    Heinisch, HH
    Henson, WK
    Hornung, BE
    Wortman, JJ
    PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 1996, 96 (01): : 282 - 294