RATES OF FORMATION OF THERMAL OXIDES OF SILICON

被引:39
作者
EVITTS, HC
COOPER, HW
FLASCHEN, SS
机构
关键词
D O I
10.1149/1.2426211
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:688 / 690
页数:3
相关论文
共 50 条
  • [11] ELECTRICAL INSTABILITY OF ULTRATHIN THERMAL OXIDES ON SILICON
    LUNDGREN, P
    ANDERSSON, MO
    FARMER, KR
    ENGSTROM, O
    MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 67 - 70
  • [12] DIELECTRIC INTEGRITY OF THIN THERMAL OXIDES ON SILICON
    BROZEK, T
    JAKUBOWSKI, A
    MICROELECTRONICS RELIABILITY, 1993, 33 (11-12) : 1637 - 1656
  • [13] Formation of Oxides Upon Thermal Debinding and Their Role in Obtaining Reaction-Bonded Silicon Carbide
    Grinchuk, P. S.
    Kiyashko, M. V.
    Stepkin, M. O.
    Akulich, A. V.
    Solovei, D. V.
    Danilova-Tret'yak, S. M.
    JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS, 2023, 96 (4) : 897 - 905
  • [14] Etch rates of anodic silicon oxides in dilute fluoride solutions
    Yahyaoui, F
    Dittrich, T
    Aggour, M
    Chazalviel, JN
    Ozanam, F
    Rappich, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (05) : B205 - B210
  • [15] Thermal evolution of the chemical structure and properties of silicon oxides
    V. B. Kopylov
    K. A. Aleksandrov
    E. V. Sergeev
    Russian Journal of General Chemistry, 2008, 78 : 868 - 875
  • [16] Growth stresses and viscosity of thermal oxides on silicon and polysilicon
    Kahn, H
    Jing, N
    Huh, M
    Heuer, AH
    JOURNAL OF MATERIALS RESEARCH, 2006, 21 (01) : 209 - 214
  • [17] Thermal evolution of the chemical structure and properties of silicon oxides
    Kopylov, V. B.
    Aleksandrov, K. A.
    Sergeev, E. V.
    RUSSIAN JOURNAL OF GENERAL CHEMISTRY, 2008, 78 (05) : 868 - 875
  • [18] DIFFUSIVITY OF IMPLANTED CHLORINE ATOMS IN THERMAL OXIDES ON SILICON
    VENGURLEKAR, AS
    RAMANATHAN, KV
    KARULKAR, VT
    SALVI, VP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1172 - 1177
  • [20] Thermal evolution of impurities in wet chemical silicon oxides
    Gurevich, AB
    Weldon, MK
    Chabal, YJ
    Opila, RL
    Sapjeta, J
    APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1257 - 1259