RATES OF FORMATION OF THERMAL OXIDES OF SILICON

被引:39
作者
EVITTS, HC
COOPER, HW
FLASCHEN, SS
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D O I
10.1149/1.2426211
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:688 / 690
页数:3
相关论文
共 5 条
[1]  
ATALLA MM, 1959, BELL SYSTEM TECH J, V38
[2]   MEASUREMENT OF THICKNESS AND REFRACTIVE INDEX OF OXIDE FILMS ON SILICON [J].
BOOKER, GR ;
BENJAMIN, CE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) :1206-1212
[5]  
Tolansky S., 1948, MULTIPLE BEAM INTERF