NEGATIVE-RESISTANCE PHENOMENA IN METAL-OXIDE-SEMICONDUCTOR (MOS) DIODES

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作者：
HAYASHI, T
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ELECTRONICS & COMMUNICATIONS IN JAPAN | 1965年 / 48卷 / 05期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：72 / &
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