CHARACTERIZATION OF POROUS SILICON LAYERS BY SPECTROSCOPIC ELLIPSOMETRY

被引：18

作者：

ROSSOW, U

MUNDER, H

THONISSEN, M

THEISS, W

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

[2] RHEIN WESTFAL TH AACHEN, INST PHYS 1, D-52074 AACHEN, GERMANY

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90134-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The influence of the microscopic structure of porous silicon layers on the dielectric function is determined by spectroscopic ellipsometry. The investigated layers were formed on high and low p-type doped substrates. Their microscopic structure was changed by varying the current density in the electrochemical formation process. The measured dielectric function was found to be extremely sensitive on the microscopic structure. New features occur in the measured dielectric function which are characteristic for the silicon skeleton in the porous silicon layers.

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页码：205 / 209

页数：5

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