HEAVY P-DOPING OF ZNTE BY MOLECULAR-BEAM EPITAXY USING A NITROGEN PLASMA SOURCE

被引：75

作者：

HAN, J ^{[1
]}

STAVRINIDES, TS ^{[1
]}

KOBAYASHI, M ^{[1
]}

GUNSHOR, RL ^{[1
]}

HAGEROTT, MM ^{[1
]}

NURMIKKO, AV ^{[1
]}

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.108568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The successful p-doping of ZnSe and Zn (S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 10(19) cm-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.

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页码：840 / 842

页数：3

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