P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR

被引：65

作者：

DRUMMOND, TJ

ZIPPERIAN, TE

FRITZ, IJ

SCHIRBER, JE

PLUT, TA

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.97116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：461 / 463

页数：3

共 10 条

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[2]

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Reggiani L., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P467

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WOODALL, JM ;

PETTIT, GD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :491-493

[7] LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

SCHIRBER, JE ;

FRITZ, IJ ;

DAWSON, LR .

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[8]

STORMER HL, 1984, APPL PHYS LETT, V44, P1062, DOI 10.1063/1.94643

[9] P-CHANNEL MODFETS USING GAALAS/GAAS TWO-DIMENSIONAL HOLE GAS [J].

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WANG, WI .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :333-335

[10] STRAINED-QUANTUM-WELL, MODULATION-DOPED, FIELD-EFFECT TRANSISTOR [J].

ZIPPERIAN, TE ;

DRUMMOND, TJ .

ELECTRONICS LETTERS, 1985, 21 (18) :823-824

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